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| MCC Features * * * * * Meets MIL 19500 /251 Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar Transistor Available in TO-5 !"# $ % !"# 2N2219A SWITCHING TRANSISTOR JAN, JANTX, JANTXV SMALL SIGNAL BIPOLAR NPN SILICON TO-39 Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 C Derate above 25 C Total Device Dissipation @ TC = 25 C Derate above 25 C Operating Junction&Storage Temperature Range VCEO VCBO VEBO IC PD PD T J, Tstg 50 75 6 800 0.8 4.6 1.0 17.0 - 55 to +200 Vdc Vdc Vdc mAdc WATTS mW/C WATTS mW/C C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL R JA R JC MAX 217 59 UNIT C/W C/W www.mccsemi.com 2N2219A MCC SYMBOL V(BR)CEO V(BR)CBO 75 V(BR)EBO 6 ICES 10 ICBO 10 10 IEBO 10 10 SYMBOL hFE MIN 50 75 100 100 30 35 VCE(sat) 0.3 1.0 VBE(sat) 0.6 1.2 2.0 Vdc Vdc Vdc Vdc MAX nAdc Adc UNIT nAdc Adc nAdc Vdc Vdc MIN 50 MAX UNIT Vdc Electrical Characteristics (TA = 25C unless otherwise noted) OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collector - Base Breakdown Voltage ( IC = 10 Adc, IE = 0 ) Emitter - Base Breakdown Voltage ( IE = 10 Adc, IC = 0 ) Collector - Emitter Cutoff Current ( VCE = 50 Vdc ) Collector - Base Cutoff Current ( VCB = 60 Vdc, IE = 0 ) ( VCB = 60 Vdc, IE = 0, T A = 150 C ) Emitter - Base Cutoff Current ( VEB = 4 Vdc ) ( VEB = 6 Vdc ) ON CHARACTERISTIC DC Current Gain ( IC = 0.1 mA dc, VCE = 10 Vdc ) (1) ( IC = 1 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc ) (1) ( IC = 150 mA dc, VCE = 10 Vdc ) (1) ( IC = 500 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc, TJ = -55C ) (1) Collector - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) Base - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) 1. Pulse Test: Pulse Width 300 s, Duty Cycle .2% 325 300 www.mccsemi.com 2N2219A MCC SYMBOL Cobo Cibo 25 SYMBOL ton MIN MAX pF UNIT MIN MAX 8.0 UNIT pF Electrical Characteristics (TA = 25C unless otherwise noted) SMALL - SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0, 100kHz f 1 MHz ) Input Capacitance ( VEB = 0.5 Vdc, IC = 0, 100kHz f 1 MHz ) SWITCHING CHARACTERISTICS Turn - On Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 =15 mAdc) ( See FIGURE 1 ) Turn - Off Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) 35 toff 300 ns ns Small - Signal AC Characteristics (TA = 25C) LOW FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 1 mA, VCE = 10 V, f = 1kHz ) HIGH FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 20 mA, VCE = 20 V, f = 100 MHz ) SYMBOL hfe MIN 75 |hfe| 2.5 12 MAX UNIT www.mccsemi.com 2N2219A MCC TO-39 CASE OUTLINE www.mccsemi.com 2N2219A MCC FIGURE 1 Saturated Turn-on Time Test Circuit t FIGURE 2 Saturated Turn-off Time Test Circuit www.mccsemi.com 2N2219A MCC DC CURRENT GAIN VCE = 10 V 250 250 typ @ 25C 200 200 hFE CURRENT GAIN 150 150 100 typ @ -55C 100 50 50 0 .0001 .001 .01 .1 1 0 IC COLLECTOR CURRENT (A) FIGURE 3 VCE, COLLECTOR-EMITTER (V) COLLECTOR SATURATION vs BASE CURRENT TJ = 25 C 1.0 1.0 0.8 IC = 500 mA 0.6 IC = 150 mA 0.4 0.8 0.6 0.4 0.2 0.2 0.0 .0001 .001 .01 .1 1 0.0 IB, BASE CURRENT (A) FIGURE 4 www.mccsemi.com 2N2219A BASE SATURATION vs BASE CURRENT TJ = 25 C 1.25 1.25 MCC VBE, BASE-EMITTER VOLTAGE (V) IC = 500 ma 1.00 IC = 150 ma 1.00 0.75 0.75 0.50 .001 0.50 .01 .1 1 IB, BASE CURRENT (A) FIGURE 5 JUNCTION CAPACITANCE TJ = 25 C 100 kHz < f < 1 MHz JUNCTION CAPACITANCE (pF) 30 30 25 CIBO 20 COBO 15 25 20 15 10 10 5 5 0 .01 .1 1 10 0 100 REVERSE JUNCTION VOLTAGE (V) FIGURE 6 www.mccsemi.com 2N2219A SWITCHING TURN - 0N TIME TJ = 25 C IC/IB = 10 100 100 MCC ton TIME (ns) max. min. 10 10 100 10 1000 COLLECTOR CURRENT (mA) FIGURE 7 SWITCHING TURN - OFF TIME TJ = 25 C IC/IB = 10 1000 1000 (ns) max. toff TIME min. 100 10 100 100 500 COLLECTOR CURRENT (mA) FIGURE 8 www.mccsemi.com 2N2219A MCC NORMALIZED GAIN VS FREQUENCY TJ = 25C IC = 20 mA VCE = 20 V 1 1 NORMALIZED GAIN .1 .1 .01 1 10 100 .01 1000 FREQUENCY MHz FIGURE 9 www.mccsemi.com |
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